Growth of InAs NWs with controlled morphology by CVD

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title = "Growth of InAs NWs with controlled morphology by CVD",
abstract = "We report on the growth of single crystal InAs NWs on Si/SiOx substrates by chemical vapor deposition (CVD). By adjusting growth parameters, the diameters, morphology, length and the proportion of superlattice ZB InAs NWs (NWs) can be controlled on a Si/SiOx substrate. Our work provides a low-cost route to grow and phase-engineer single crystal InAs NWs for a wide range of potential applications.",
author = "Huang, {Y. S.} and M. Li and J. Wang and Y. Xing and Xu, {H. Q.}",
year = "2017",
month = "8",
day = "15",
doi = "10.1088/1742-6596/864/1/012013",
language = "English",
volume = "864",
journal = "Journal of Physics: Conference Series",
issn = "1742-6596",
publisher = "IOP Publishing",
number = "1",