Growth of InAs NWs with controlled morphology by CVD

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Growth of InAs NWs with controlled morphology by CVD. / Huang, Y. S.; Li, M.; Wang, J.; Xing, Y.; Xu, H. Q.

I: Journal of Physics: Conference Series, Vol. 864, Nr. 1, 012013, 15.08.2017.

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Huang, Y. S. ; Li, M. ; Wang, J. ; Xing, Y. ; Xu, H. Q. / Growth of InAs NWs with controlled morphology by CVD. I: Journal of Physics: Conference Series. 2017 ; Vol. 864, Nr. 1.

RIS

TY - JOUR

T1 - Growth of InAs NWs with controlled morphology by CVD

AU - Huang, Y. S.

AU - Li, M.

AU - Wang, J.

AU - Xing, Y.

AU - Xu, H. Q.

PY - 2017/8/15

Y1 - 2017/8/15

N2 - We report on the growth of single crystal InAs NWs on Si/SiOx substrates by chemical vapor deposition (CVD). By adjusting growth parameters, the diameters, morphology, length and the proportion of superlattice ZB InAs NWs (NWs) can be controlled on a Si/SiOx substrate. Our work provides a low-cost route to grow and phase-engineer single crystal InAs NWs for a wide range of potential applications.

AB - We report on the growth of single crystal InAs NWs on Si/SiOx substrates by chemical vapor deposition (CVD). By adjusting growth parameters, the diameters, morphology, length and the proportion of superlattice ZB InAs NWs (NWs) can be controlled on a Si/SiOx substrate. Our work provides a low-cost route to grow and phase-engineer single crystal InAs NWs for a wide range of potential applications.

U2 - 10.1088/1742-6596/864/1/012013

DO - 10.1088/1742-6596/864/1/012013

M3 - Article

VL - 864

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6596

IS - 1

M1 - 012013

ER -