Growth of ultrathin ZrO2 films on Si(100): Film-thickness-dependent band alignment

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The band alignment of ultrathin ZrO2 films of different thickness formed on Si(100) have been monitored with synchrotron radiation photoelectron spectroscopy and x-ray absorption spectroscopy. The films were deposited sequentially by way of metal-organic chemical-vapor deposition in ultrahigh vacuum. A significant decrease in the conduction band offset is found for increasing film thickness. It is accompanied by a corresponding increase of the valence band offset. The variations originate in the formation of an interfacial layer characterized by a lower degree of Zr-O interaction than in bulk ZrO2 but with no clear evidence for partially occupied Zr 4d dangling bonds. (c) 2006 American Institute of Physics.


  • A Sandell
  • PG Karlsson
  • JH Richter
  • Jakob Blomquist
  • Per Uvdal
  • TM Grehk
Enheter & grupper

Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Atom- och molekylfysik och optik
TidskriftApplied Physics Letters
Utgåva nummer13
StatusPublished - 2006
Peer review utfördJa