Height-controlled nanowire branches on nanotrees using a polymer mask

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Height-controlled nanowire branches on nanotrees using a polymer mask. / Dick Thelander, Kimberly; Deppert, Knut; Larsson, Magnus; Seifert, Werner; Wallenberg, Reine; Samuelson, Lars.

I: Nanotechnology, Vol. 18, Nr. 3, 035601, 2007.

Forskningsoutput: TidskriftsbidragArtikel i vetenskaplig tidskrift

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TY - JOUR

T1 - Height-controlled nanowire branches on nanotrees using a polymer mask

AU - Dick Thelander, Kimberly

AU - Deppert, Knut

AU - Larsson, Magnus

AU - Seifert, Werner

AU - Wallenberg, Reine

AU - Samuelson, Lars

N1 - The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Solid State Physics (011013006), Polymer and Materials Chemistry (LTH) (011001041)

PY - 2007

Y1 - 2007

N2 - The production of complex three-dimensional dendritic structures is an important step in the application of semiconductor nanowires. One promising method for achieving this is the sequential seeding of multiple generations of epitaxial nanowires using metal seed particles. However, it is difficult to control and predict the position of second and higher generation nanowires with respect to the first generation. Here we demonstrate a procedure for controlling the position of second-generation epitaxial nanowire branches on vertically aligned nanowire trunks. This method uses a spun-on polymer layer that masks first-generation wires to a specified height, preventing the growth of nanowire branches at lower positions as well as new nanowire growth on the substrate. This method appears not to be dependent on the materials or growth system (in this case MOVPE-grown GaP is demonstrated), and hence is likely to be applicable to a variety of materials systems and growth procedures using metal seed particles.

AB - The production of complex three-dimensional dendritic structures is an important step in the application of semiconductor nanowires. One promising method for achieving this is the sequential seeding of multiple generations of epitaxial nanowires using metal seed particles. However, it is difficult to control and predict the position of second and higher generation nanowires with respect to the first generation. Here we demonstrate a procedure for controlling the position of second-generation epitaxial nanowire branches on vertically aligned nanowire trunks. This method uses a spun-on polymer layer that masks first-generation wires to a specified height, preventing the growth of nanowire branches at lower positions as well as new nanowire growth on the substrate. This method appears not to be dependent on the materials or growth system (in this case MOVPE-grown GaP is demonstrated), and hence is likely to be applicable to a variety of materials systems and growth procedures using metal seed particles.

U2 - 10.1088/0957-4484/18/3/035601

DO - 10.1088/0957-4484/18/3/035601

M3 - Article

VL - 18

JO - Nanotechnology

T2 - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 3

M1 - 035601

ER -