High carrier mobility in low band gap polymer-based field-effect transistors

Forskningsoutput: TidskriftsbidragArtikel i vetenskaplig tidskrift

Abstract

A conjugated polymer with a low band gap of 1.21 eV, i.e., absorbing infrared light, is demonstrated as active material in field-effect transistors (FETs). The material consists of alternating fluorene units and low band gap segments with electron donor-acceptor-donor units composed of two electron-donating thiophene rings attached on both sides of a thiadiazolo-quinoxaline electron-acceptor group. The polymer is solution-processable and air-stable; the resulting FETs exhibit typical p-channel characteristics and field-effect mobility of 0.03 cm(2) V-1 s(-1).

Detaljer

Författare
  • MX Chen
  • X Crispin
  • E Perzon
  • MR Andersson
  • Tönu Pullerits
  • M Andersson
  • O Inganas
  • M Berggren
Enheter & grupper
Forskningsområden

Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Atom- och molekylfysik och optik
Originalspråkengelska
TidskriftApplied Physics Letters
Volym87
Utgåva nummer25
StatusPublished - 2005
PublikationskategoriForskning
Peer review utfördJa