High crystal quality wurtzite-zinc blende heterostructures in metal-organic vapor phase epitaxy-grown GaAs nanowires

Forskningsoutput: TidskriftsbidragArtikel i vetenskaplig tidskrift

Standard

High crystal quality wurtzite-zinc blende heterostructures in metal-organic vapor phase epitaxy-grown GaAs nanowires. / Lehmann, Sebastian; Jacobsson, Daniel; Deppert, Knut; Dick Thelander, Kimberly.

I: Nano Reseach, Vol. 5, Nr. 7, 2012, s. 470-476.

Forskningsoutput: TidskriftsbidragArtikel i vetenskaplig tidskrift

Harvard

APA

CBE

MLA

Vancouver

Author

RIS

TY - JOUR

T1 - High crystal quality wurtzite-zinc blende heterostructures in metal-organic vapor phase epitaxy-grown GaAs nanowires

AU - Lehmann, Sebastian

AU - Jacobsson, Daniel

AU - Deppert, Knut

AU - Dick Thelander, Kimberly

N1 - The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Polymer and Materials Chemistry (LTH) (011001041), Solid State Physics (011013006)

PY - 2012

Y1 - 2012

N2 - We have prepared GaAs wurtzite (WZ)-zinc blende (ZB) nanowire heterostructures by Au particle-assisted metal-organic vapor phase epitaxy (MOVPE) growth. Superior crystal quality of both the transition region between WZ and ZB and of the individual segments themselves was found for WZ-ZB single heterostructures. Pure crystal phases were achieved and the ZB segments were found to be free of any stacking defects, whereas the WZ sections showed a maximum stacking fault density of 20 mu m(-1). The hexagonal cross-sectional wires are terminated by -type side facets for the WZ segment and predominantly {110}-type side facets for the ZB part of the wire. A diameter increase occurred after the transition from WZ to ZB. Additionally, facets of the -type as well as downwards-directed overgrowth of the WZ segments were formed at the WZ to ZB transition to compensate for the observed diameter increase and facet rotation. In the case of WZ-ZB multiple heterostructures, we observed slightly higher densities of stacking faults and twin planes compared to single heterostructures.

AB - We have prepared GaAs wurtzite (WZ)-zinc blende (ZB) nanowire heterostructures by Au particle-assisted metal-organic vapor phase epitaxy (MOVPE) growth. Superior crystal quality of both the transition region between WZ and ZB and of the individual segments themselves was found for WZ-ZB single heterostructures. Pure crystal phases were achieved and the ZB segments were found to be free of any stacking defects, whereas the WZ sections showed a maximum stacking fault density of 20 mu m(-1). The hexagonal cross-sectional wires are terminated by -type side facets for the WZ segment and predominantly {110}-type side facets for the ZB part of the wire. A diameter increase occurred after the transition from WZ to ZB. Additionally, facets of the -type as well as downwards-directed overgrowth of the WZ segments were formed at the WZ to ZB transition to compensate for the observed diameter increase and facet rotation. In the case of WZ-ZB multiple heterostructures, we observed slightly higher densities of stacking faults and twin planes compared to single heterostructures.

KW - Nanowires

KW - GaAs

KW - heterostructure

KW - polytypism

KW - metal-organic vapor phase

KW - epitaxy (MOVPE)-growth

U2 - 10.1007/s12274-012-0232-3

DO - 10.1007/s12274-012-0232-3

M3 - Article

VL - 5

SP - 470

EP - 476

JO - Nano Reseach

T2 - Nano Reseach

JF - Nano Reseach

SN - 1998-0124

IS - 7

ER -