High resolution 100kV electron beam lithography in SU-8

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High resolution 100 kV electron beam lithography in thin layers of the negative resist SU-8 is demonstrated. Sub-30 nm lines with a pitch down to 300 nm are written in 100 nm thick SU-8. Two reactive ion etch processes are developed in order to transfer the SU-8 structures into a silicon substrate, a Soft O-2-Plasma process to remove SU-8 residues on the silicon surface after development and a highly anisotropic SF6/O-2/CHF3 based process to transfer the pattern into a silicon substrate, with selectivity between silicon and SU-8 of approximately 2. 30 nm lines patterned in SU-8 are successfully transferred into a silicon substrate, which is used as a stamp in a nanoimprint lithography process to fabricate a nanochannel device for DNA stretching experiments. (c) 2006 Elsevier B.V. All rights reserved.


  • B. Bilenberg
  • S. Jacobsen
  • M.s. Schmidt
  • L.h.d. Skjolding
  • P. Shi
  • P. Bøggild
  • J.O. Tegenfeldt
  • A. Kristensen
Enheter & grupper
Externa organisationer
  • Technical University of Denmark

Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Den kondenserade materiens fysik


Sidor (från-till)1609-1612
TidskriftMicroelectronic Engineering
Utgåva nummer4-9
StatusPublished - 2006
Peer review utfördJa
EvenemangMicro- and Nano-Engineering MNE 2005 - Vienna, Österrike
Varaktighet: 2005 sep 192005 sep 22