High resolution scanning gate microscopy measurements on InAs/GaSb nanowire Esaki diode devices

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  1. 2017
  2. Development of new characterization techniques for III-V nanowire devices

    Olof Persson, 2017 jan, Lund: Lund University, Faculty of Science, Department of Physics, Division of Synchrotron Radiation Research. 214 s.

    Forskningsoutput: AvhandlingDoktorsavhandling (sammanläggning)