Highly Strained III-V-V Coaxial Nanowire Quantum Wells with Strong Carrier Confinement

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Coaxial quantum wells (QWs) are ideal candidates for nanowire (NW) lasers, providing strong carrier confinement and allowing close matching of the cavity mode and gain medium. We report a detailed structural and optical study and the observation of lasing for a mixed group-V GaAsP NW with GaAs QWs. This system offers a number of potential advantages in comparison to previously studied common group-V structures (e.g., AlGaAs/GaAs) including highly strained binary GaAs QWs, the absence of a lower band gap core region, and deep carrier potential wells. Despite the large lattice mismatch (∼1.7%), it is possible to grow defect-free GaAs coaxial QWs with high optical quality. The large band gap difference results in strong carrier confinement, and the ability to apply a high degree of compressive strain to the GaAs QWs is also expected to be beneficial for laser performance. For a non-fully optimized structure containing three QWs, we achieve low-temperature lasing with a low external (internal) threshold of 20 (0.9) μJ/cm2/pulse. In addition, a very narrow lasing line width of ∼0.15 nm is observed. These results extend the NW laser structure to coaxial III-V-V QWs, which are highly suitable as the platform for NW emitters.


  • Yunyan Zhang
  • George Davis
  • H. Aruni Fonseka
  • Anton Velichko
  • Anders Gustafsson
  • Tillmann Godde
  • Dhruv Saxena
  • Martin Aagesen
  • Patrick W. Parkinson
  • James A. Gott
  • Suguo Huo
  • Ana M. Sanchez
  • David J. Mowbray
  • Huiyun Liu
Enheter & grupper
Externa organisationer
  • University College London
  • University of Sheffield
  • University of Warwick
  • Imperial College London
  • University of Manchester
  • Danish Defence Research Establishment

Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Atom- och molekylfysik och optik


Sidor (från-till)5931-5938
Antal sidor8
TidskriftACS Nano
Utgåva nummer5
StatusPublished - 2019
Peer review utfördJa

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