Hole doping of graphene supported on Ir(111) by AlBr3

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Abstract

In this letter, we report an easy and tenable way to tune the type of charge carriers in graphene, using a buried layer of AlBr3 and its derivatives on the graphene/Ir(111) interface. Upon the deposition of AlBr3 on graphene/Ir(111) and subsequent temperature-assisted intercalation of graphene/Ir(111) with atomic Br and AlBr3, pronounced hole doping of graphene is observed. The evolution of the graphene/Br-AlBr3/Ir(111) system at different stages of intercalation has been investigated by means of microbeam low-energy electron microscopy/electron diffraction, core-level photoelectron spectroscopy, and angle-resolved photoelectron spectroscopy. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4790579]

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Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Naturvetenskap
  • Fysik
Originalspråkengelska
Artikelnummer061601
TidskriftApplied Physics Letters
Volym102
Utgåva nummer6
StatusPublished - 2013
PublikationskategoriForskning
Peer review utfördJa