III-V Nanowires-Extending a Narrowing Road

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III-V Nanowires-Extending a Narrowing Road. / Wernersson, Lars-Erik; Thelander, Claes; Lind, Erik; Samuelson, Lars.

I: Proceedings of the IEEE, Vol. 98, Nr. 12, 2010, s. 2047-2060.

Forskningsoutput: TidskriftsbidragArtikel i vetenskaplig tidskrift

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TY - JOUR

T1 - III-V Nanowires-Extending a Narrowing Road

AU - Wernersson, Lars-Erik

AU - Thelander, Claes

AU - Lind, Erik

AU - Samuelson, Lars

PY - 2010

Y1 - 2010

N2 - Semiconductor nanowires have attracted considerable attention during the last decade and are considered as an alternative path to extend the road for scaled semiconductor devices. The interest is motivated by the improved electrostatic control in the cylindrical geometry and the possibility to utilize heterostructures in transistor design. Currently, nanowire transistors have been realized both in III-Vs and in group IV materials employing top-down as well as bottom-up technologies. In this review, we give an overview of the field and, in particular, we summarize state-of-the-art for III-V nanowire devices. It is demonstrated that the growth and processing technologies are maturing and that devices with good transistor characteristics are being fabricated by a combined bottom-up and top-down approach. Also, the first radio-frequency (RF)-implementations are reviewed and discussed.

AB - Semiconductor nanowires have attracted considerable attention during the last decade and are considered as an alternative path to extend the road for scaled semiconductor devices. The interest is motivated by the improved electrostatic control in the cylindrical geometry and the possibility to utilize heterostructures in transistor design. Currently, nanowire transistors have been realized both in III-Vs and in group IV materials employing top-down as well as bottom-up technologies. In this review, we give an overview of the field and, in particular, we summarize state-of-the-art for III-V nanowire devices. It is demonstrated that the growth and processing technologies are maturing and that devices with good transistor characteristics are being fabricated by a combined bottom-up and top-down approach. Also, the first radio-frequency (RF)-implementations are reviewed and discussed.

KW - nanowire field-effect transistors (FETs)

KW - nanotechnology

KW - Complementary metal-oxide-semiconductor (CMOS)

KW - III-V

KW - metal-oxide-semiconductor field-effect transistors (MOSFETs)

U2 - 10.1109/JPROC.2010.2065211

DO - 10.1109/JPROC.2010.2065211

M3 - Article

VL - 98

SP - 2047

EP - 2060

JO - Proceedings of the IEEE

JF - Proceedings of the IEEE

SN - 0018-9219

IS - 12

ER -