In Situ Etching for Total Control Over Axial and Radial Nanowire Growth

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In Situ Etching for Total Control Over Axial and Radial Nanowire Growth. / Borgström, Magnus; Wallentin, Jesper; Trägårdh, Johanna; Ramvall, Peter; Ek, Martin; Wallenberg, Reine; Samuelson, Lars; Deppert, Knut.

I: Nano Reseach, Vol. 3, Nr. 4, 2010, s. 264-270.

Forskningsoutput: TidskriftsbidragArtikel i vetenskaplig tidskrift

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TY - JOUR

T1 - In Situ Etching for Total Control Over Axial and Radial Nanowire Growth

AU - Borgström, Magnus

AU - Wallentin, Jesper

AU - Trägårdh, Johanna

AU - Ramvall, Peter

AU - Ek, Martin

AU - Wallenberg, Reine

AU - Samuelson, Lars

AU - Deppert, Knut

N1 - The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Solid State Physics (011013006), Polymer and Materials Chemistry (LTH) (011001041)

PY - 2010

Y1 - 2010

N2 - We report a method using in situ etching to decouple the axial from the radial nanowire growth pathway, independent of other growth parameters. Thereby a wide range of growth parameters can be explored to improve the nanowire properties without concern of tapering or excess structural defects formed during radial growth. We demonstrate the method using etching by HCl during InP nanowire growth. The improved crystal quality of etched nanowires is indicated by strongly enhanced photoluminescence as compared to reference nanowires obtained without etching.

AB - We report a method using in situ etching to decouple the axial from the radial nanowire growth pathway, independent of other growth parameters. Thereby a wide range of growth parameters can be explored to improve the nanowire properties without concern of tapering or excess structural defects formed during radial growth. We demonstrate the method using etching by HCl during InP nanowire growth. The improved crystal quality of etched nanowires is indicated by strongly enhanced photoluminescence as compared to reference nanowires obtained without etching.

KW - MOVPE

KW - photoluminescence

KW - in situ etching

KW - nanowire growth

U2 - 10.1007/s12274-010-1029-x

DO - 10.1007/s12274-010-1029-x

M3 - Article

VL - 3

SP - 264

EP - 270

JO - Nano Reseach

T2 - Nano Reseach

JF - Nano Reseach

SN - 1998-0124

IS - 4

ER -