InAs hole inversion and bandgap interface state density of 2 x 10(11) cm(-2) eV(-1) at HfO2/InAs interfaces

Forskningsoutput: TidskriftsbidragArtikel i vetenskaplig tidskrift

Abstract

High-k/InAs interfaces have been manufactured using InAs surface oxygen termination and low temperature atomic layer deposition of HfO2. Capacitance-voltage (C-V) curves revert to essentially classical shape revealing mobile carrier response in accumulation and depletion, hole inversion is observed, and predicted minority carrier response frequency in the hundred kHz range is experimentally confirmed; reference samples using conventional techniques show a trap dominated capacitance response. C-V curves have been fitted using advanced models including nonparabolicity and Fermi-Dirac distribution. For an equivalent oxide thickness of 1.3 nm, an interface state density D-it = 2.2 x 10(11) cm(-2) eV(-1) has been obtained throughout the InAs bandgap. (C) 2013 AIP Publishing LLC.

Detaljer

Författare
  • C. H. Wang
  • S. W. Wang
  • G. Doornbos
  • G. Astromskas
  • K. Bhuwalka
  • R. Contreras-Guerrero
  • M. Edirisooriya
  • J. S. Rojas-Ramirez
  • G. Vellianitis
  • R. Oxland
  • M. C. Holland
  • C. H. Hsieh
  • Peter Ramvall
  • Erik Lind
  • W. C. Hsu
  • Lars-Erik Wernersson
  • R. Droopad
  • M. Passlack
  • C. H. Diaz
Enheter & grupper
Forskningsområden

Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Den kondenserade materiens fysik
  • Elektroteknik och elektronik
Originalspråkengelska
Artikelnummer143510
TidskriftApplied Physics Letters
Volym103
Utgåva nummer14
StatusPublished - 2013
PublikationskategoriForskning
Peer review utfördJa