InAs nanowire metal-oxide-semiconductor capacitors

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title = "InAs nanowire metal-oxide-semiconductor capacitors",
abstract = "We present a capacitance-voltage study for arrays of vertical InAs nanowires. Metal-oxide-semiconductor (MOS) capacitors are obtained by insulating the nanowires with a conformal 10 nm HfO2 layer and using a top Cr/Au metallization as one of the capacitor's electrodes. The described fabrication and characterization technique enables a systematic investigation of the carrier density in the nanowires as well as of the quality of the MOS interface.",
author = "Stefano Roddaro and Kristian Storm and Gvidas Astromskas and Lars Samuelson and Lars-Erik Wernersson and Olov Karlstr{\"o}m and Andreas Wacker",
year = "2008",
doi = "10.1063/1.2949080",
language = "English",
volume = "92",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics (AIP)",
number = "25",