InAs nanowire metal-oxide-semiconductor capacitors

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InAs nanowire metal-oxide-semiconductor capacitors. / Roddaro, Stefano; Storm, Kristian; Astromskas, Gvidas; Samuelson, Lars; Wernersson, Lars-Erik; Karlström, Olov; Wacker, Andreas.

I: Applied Physics Letters, Vol. 92, Nr. 25, 253509, 2008.

Forskningsoutput: TidskriftsbidragArtikel i vetenskaplig tidskrift

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Roddaro, Stefano ; Storm, Kristian ; Astromskas, Gvidas ; Samuelson, Lars ; Wernersson, Lars-Erik ; Karlström, Olov ; Wacker, Andreas. / InAs nanowire metal-oxide-semiconductor capacitors. I: Applied Physics Letters. 2008 ; Vol. 92, Nr. 25.

RIS

TY - JOUR

T1 - InAs nanowire metal-oxide-semiconductor capacitors

AU - Roddaro, Stefano

AU - Storm, Kristian

AU - Astromskas, Gvidas

AU - Samuelson, Lars

AU - Wernersson, Lars-Erik

AU - Karlström, Olov

AU - Wacker, Andreas

PY - 2008

Y1 - 2008

N2 - We present a capacitance-voltage study for arrays of vertical InAs nanowires. Metal-oxide-semiconductor (MOS) capacitors are obtained by insulating the nanowires with a conformal 10 nm HfO2 layer and using a top Cr/Au metallization as one of the capacitor's electrodes. The described fabrication and characterization technique enables a systematic investigation of the carrier density in the nanowires as well as of the quality of the MOS interface.

AB - We present a capacitance-voltage study for arrays of vertical InAs nanowires. Metal-oxide-semiconductor (MOS) capacitors are obtained by insulating the nanowires with a conformal 10 nm HfO2 layer and using a top Cr/Au metallization as one of the capacitor's electrodes. The described fabrication and characterization technique enables a systematic investigation of the carrier density in the nanowires as well as of the quality of the MOS interface.

U2 - 10.1063/1.2949080

DO - 10.1063/1.2949080

M3 - Article

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 25

M1 - 253509

ER -