InAs quantum dots grown on InAlGaAs lattice matched to InP

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Abstract

In this paper, we present InAs quantum dots prepared on an InxAlyGa1-x-yAs surface by metal organic vapor phase epitaxy. Atomic force microscopy measurements indicate that dots grown on material with higher Al content are smaller, and that the local dot densities on step-bunched facets formed on the vicinal (0 0 1) surfaces increase. We find that these dots show luminescence at very long wavelengths, lambda(room temperature) approximate to 2.1 mum, and that the emission wavelengths are blue-shifted when the Al content is increased in the layer onto which dot material is deposited. (C) 2003 Elsevier Science B.V. All rights reserved.

Detaljer

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Forskningsområden

Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Den kondenserade materiens fysik

Nyckelord

Originalspråkengelska
Sidor (från-till)481-485
TidskriftJournal of Crystal Growth
Volym252
Utgivningsnummer4
StatusPublished - 2003
PublikationskategoriForskning
Peer review utfördJa