Influence of doping on the electronic transport in GaSb/InAs(Sb) nanowire tunnel devices

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Abstract

The effect of various doping profiles on the electronic transport in GaSb/InAs(Sb) nanowire tunnel diodes is investigated. Zn-doping of the GaSb segment increases both the peak current density and the current level in reverse bias. Top-gated diodes exhibit peak current modulation with a threshold voltage which can be controlled by Zn-doping the InAs(Sb) segment. By intentionally n-doping the InAs(Sb) segment degenerate doping on both sides of the heterojunction can be achieved, as well as tunnel diodes with peak current of 420 kA/cm(2) at V-DS = 0.16V and a record-high current density of 3.6 MA/cm(2) at V-DS = -0.5V. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4739082]

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Forskningsområden

Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Elektroteknik och elektronik
  • Den kondenserade materiens fysik
Originalspråkengelska
TidskriftApplied Physics Letters
Volym101
Utgåva nummer4
StatusPublished - 2012
PublikationskategoriForskning
Peer review utfördJa

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