InN quantum dots on GaN nanowires grown by MOVPE

Forskningsoutput: Kapitel i bok/rapport/Conference proceedingKonferenspaper i proceeding

Abstract

In this work, growth of InN quantum dots (QDs) on GaN nanowires (NWs) by metal-organic vapour phase epitaxy is demonstrated, illustrating the feasibility to combine 0D and 1D structures for nitride semiconductors. Selective area growth was used to generate arrays of c-oriented GaN NWs using Si3N4 as the mask material. In general, InN QDs tend to form at the NW edges between the m-plane side facets, but the QD growth can also be tuned to the side facets by controlling the growth temperature and the growth rate. TEM characterization reveals that I1-type stacking faults are formed in the QDs and originate from the misfit dislocations at the InN/GaN interface. Photoluminescence measurement at 4 K shows that the peak shifts to high energy with reduced dot size. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Detaljer

Författare
Enheter & grupper
Forskningsområden

Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Den kondenserade materiens fysik
  • Kemi

Nyckelord

Originalspråkengelska
Titel på värdpublikationPhysica Status Solici C: Current Topics in Solid State Physics, Vol 11, No 3-4
FörlagJohn Wiley & Sons
Sidor421-424
Volym11
StatusPublished - 2014
PublikationskategoriForskning
Peer review utfördJa
Evenemang10th International Conference on Nitride Semiconductors (ICNS) - Washington, DC
Varaktighet: 2013 aug 252013 aug 30

Publikationsserier

Namn
Nummer3-4
Volym11
ISSN (tryckt)1610-1642
ISSN (elektroniskt)1862-6351

Konferens

Konferens10th International Conference on Nitride Semiconductors (ICNS)
Period2013/08/252013/08/30