InP nanowire p-type doping via Zinc indiffusion

Forskningsoutput: TidskriftsbidragArtikel i vetenskaplig tidskrift

Abstract

We report an alternative pathway for p-type InP nanowire (NW) doping by diffusion of Zn species from the gas phase. The diffusion of Zn was performed in a MOVPE reactor at 350–500 °C for 5–20 min with either H2 environment or additional phosphorus in the atmosphere. In addition, Zn3P2 shells were studied as protective caps during post-diffusion annealing. This post-diffusion annealing was performed to outdiffuse and activate Zn in interstitial locations. The characterization methods included photoluminescence and single NW conductivity and carrier concentration measurements. The acquired carrier concentrations were in the order of >1017 cm−3 for NWs without post-annealing, and up to 1018 cm−3 for NWs annealed with the Zn3P2 shells. The diffused Zn caused redshift to the photoluminescence signal, and the degree of redshift depended on the diffusion process.

Detaljer

Författare
Enheter & grupper
Externa organisationer
  • Aalto University
  • Federal University of Rio de Janeiro
Forskningsområden

Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Nanoteknik

Nyckelord

Originalspråkengelska
Sidor (från-till)18-26
Antal sidor9
TidskriftJournal of Crystal Growth
Volym451
StatusPublished - 2016 okt 1
PublikationskategoriForskning
Peer review utfördJa

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