Large area quasi-free standing monolayer graphene on 3C-SiC(111)

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Abstract

Large scale, homogeneous quasi-free standing monolayer graphene is obtained on cubic silicon carbide, i.e., the 3C-SiC(111) surface, which represents an appealing and cost effective platform for graphene growth. The quasi-free monolayer is produced by intercalation of hydrogen under the interfacial, (6 root 3 x 6 root 3)R30 degrees-reconstructed carbon layer. After intercalation, angle resolved photoemission spectroscopy reveals sharp linear pi-bands. The decoupling of graphene from the substrate is identified by x-ray photoemission spectroscopy and low energy electron diffraction. Atomic force microscopy and low energy electron microscopy demonstrate that homogeneous monolayer domains extend over areas of hundreds of square-micrometers. (C) 2011 American Institute of Physics. [doi:10.1063/1.3618674]

Detaljer

Författare
  • C. Coletti
  • K. V. Emtsev
  • Alexei Zakharov
  • T. Ouisse
  • D. Chaussende
  • U. Starke
Enheter & grupper
Forskningsområden

Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Naturvetenskap
  • Fysik
Originalspråkengelska
Artikelnummer081904
TidskriftApplied Physics Letters
Volym99
Utgåva nummer8
StatusPublished - 2011
PublikationskategoriForskning
Peer review utfördJa