Large area quasi-free standing monolayer graphene on 3C-SiC(111)

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title = "Large area quasi-free standing monolayer graphene on 3C-SiC(111)",
abstract = "Large scale, homogeneous quasi-free standing monolayer graphene is obtained on cubic silicon carbide, i.e., the 3C-SiC(111) surface, which represents an appealing and cost effective platform for graphene growth. The quasi-free monolayer is produced by intercalation of hydrogen under the interfacial, (6 root 3 x 6 root 3)R30 degrees-reconstructed carbon layer. After intercalation, angle resolved photoemission spectroscopy reveals sharp linear pi-bands. The decoupling of graphene from the substrate is identified by x-ray photoemission spectroscopy and low energy electron diffraction. Atomic force microscopy and low energy electron microscopy demonstrate that homogeneous monolayer domains extend over areas of hundreds of square-micrometers. (C) 2011 American Institute of Physics. [doi:10.1063/1.3618674]",
author = "C. Coletti and Emtsev, {K. V.} and Alexei Zakharov and T. Ouisse and D. Chaussende and U. Starke",
year = "2011",
doi = "10.1063/1.3618674",
language = "English",
volume = "99",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics (AIP)",
number = "8",