Large area quasi-free standing monolayer graphene on 3C-SiC(111)

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Large area quasi-free standing monolayer graphene on 3C-SiC(111). / Coletti, C.; Emtsev, K. V.; Zakharov, Alexei; Ouisse, T.; Chaussende, D.; Starke, U.

I: Applied Physics Letters, Vol. 99, Nr. 8, 081904, 2011.

Forskningsoutput: TidskriftsbidragArtikel i vetenskaplig tidskrift

Harvard

Coletti, C, Emtsev, KV, Zakharov, A, Ouisse, T, Chaussende, D & Starke, U 2011, 'Large area quasi-free standing monolayer graphene on 3C-SiC(111)', Applied Physics Letters, vol. 99, nr. 8, 081904. https://doi.org/10.1063/1.3618674

APA

Coletti, C., Emtsev, K. V., Zakharov, A., Ouisse, T., Chaussende, D., & Starke, U. (2011). Large area quasi-free standing monolayer graphene on 3C-SiC(111). Applied Physics Letters, 99(8), [081904]. https://doi.org/10.1063/1.3618674

CBE

Coletti C, Emtsev KV, Zakharov A, Ouisse T, Chaussende D, Starke U. 2011. Large area quasi-free standing monolayer graphene on 3C-SiC(111). Applied Physics Letters. 99(8):Article 081904. https://doi.org/10.1063/1.3618674

MLA

Vancouver

Coletti C, Emtsev KV, Zakharov A, Ouisse T, Chaussende D, Starke U. Large area quasi-free standing monolayer graphene on 3C-SiC(111). Applied Physics Letters. 2011;99(8). 081904. https://doi.org/10.1063/1.3618674

Author

Coletti, C. ; Emtsev, K. V. ; Zakharov, Alexei ; Ouisse, T. ; Chaussende, D. ; Starke, U. / Large area quasi-free standing monolayer graphene on 3C-SiC(111). I: Applied Physics Letters. 2011 ; Vol. 99, Nr. 8.

RIS

TY - JOUR

T1 - Large area quasi-free standing monolayer graphene on 3C-SiC(111)

AU - Coletti, C.

AU - Emtsev, K. V.

AU - Zakharov, Alexei

AU - Ouisse, T.

AU - Chaussende, D.

AU - Starke, U.

PY - 2011

Y1 - 2011

N2 - Large scale, homogeneous quasi-free standing monolayer graphene is obtained on cubic silicon carbide, i.e., the 3C-SiC(111) surface, which represents an appealing and cost effective platform for graphene growth. The quasi-free monolayer is produced by intercalation of hydrogen under the interfacial, (6 root 3 x 6 root 3)R30 degrees-reconstructed carbon layer. After intercalation, angle resolved photoemission spectroscopy reveals sharp linear pi-bands. The decoupling of graphene from the substrate is identified by x-ray photoemission spectroscopy and low energy electron diffraction. Atomic force microscopy and low energy electron microscopy demonstrate that homogeneous monolayer domains extend over areas of hundreds of square-micrometers. (C) 2011 American Institute of Physics. [doi:10.1063/1.3618674]

AB - Large scale, homogeneous quasi-free standing monolayer graphene is obtained on cubic silicon carbide, i.e., the 3C-SiC(111) surface, which represents an appealing and cost effective platform for graphene growth. The quasi-free monolayer is produced by intercalation of hydrogen under the interfacial, (6 root 3 x 6 root 3)R30 degrees-reconstructed carbon layer. After intercalation, angle resolved photoemission spectroscopy reveals sharp linear pi-bands. The decoupling of graphene from the substrate is identified by x-ray photoemission spectroscopy and low energy electron diffraction. Atomic force microscopy and low energy electron microscopy demonstrate that homogeneous monolayer domains extend over areas of hundreds of square-micrometers. (C) 2011 American Institute of Physics. [doi:10.1063/1.3618674]

U2 - 10.1063/1.3618674

DO - 10.1063/1.3618674

M3 - Article

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 8

M1 - 081904

ER -