Large magnetoresistance in Co/Ni/Co ferromagnetic single electron transistors

Forskningsoutput: TidskriftsbidragArtikel i vetenskaplig tidskrift

Bibtex

@article{57b579d9e8214279b2d3e412b3e1ce25,
title = "Large magnetoresistance in Co/Ni/Co ferromagnetic single electron transistors",
abstract = "The authors report on magnetotransport investigations of nanoscaled ferromagnetic Co/Ni/Co single electron transistors. As a result of reduced size, the devices exhibit single electron transistor characteristics at 4.2 K. Magnetotransport measurements carried out at 1.8 K reveal tunneling magnetoresistance (TMR) traces with negative coercive fields, which the authors interpret in terms of a switching mechanism driven by the shape anisotropy of the central wirelike Ni island. A large TMR of about 18% is observed within a finite source-drain bias regime. The TMR decreases rapidly with increasing bias, which the authors tentatively attribute to excitation of magnons in the central island. (c) 2007 American Institute of Physics.",
author = "Ruisheng Liu and H. Pettersson and L. Michalak and Canali, {C. M.} and Dmitry Suyatin and Lars Samuelson",
year = "2007",
doi = "10.1063/1.2714289",
language = "English",
volume = "90",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics (AIP)",
number = "12",

}