Laser lithography on resist bi-layer for nanoelectromechanical systems prototyping

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Bibtex

@article{065b67a1a749466ca9f4755711751db1,
title = "Laser lithography on resist bi-layer for nanoelectromechanical systems prototyping",
abstract = "We present a laser lithography technique based on lift-off, for fast and flexible prototyping of micro and nanoelectromechanical systems (MEMS/NEMS). The technique is based on direct laser writing on substrates coated with a resist bi-layer consisting of polymethyl methacrylate (PMMA) on lift-off resist (LOR). Laser writing melts and evaporates the PMMA exposing the LOR. Oxygen ashing removes PMMA residues within the lithography pattern. A resist solvent is used to transfer the pattern down to the substrate. The LOR is dissolved isotropically while the PMMA is unaffected by the solvent, hence creating an undercut profile. After metal evaporation a two-step lift-off process prevents metal flakes from adhering to the surface. First, warm acetone dissolves the PMMA and lifts off the metal layer, then warm Remover PG removes the LOR and any remaining metal. Metal structures with line widths down to 600 nm and dots with 600 mn diameters are presented. (C) 2004 Elsevier B.V. All rights reserved.",
keywords = "rapid prototyping, direct write, nanoeletromechanical systems, laser lithography, resist bi-layer",
author = "E Forsen and Patrick Carlberg and Lars Montelius and A Boisen",
year = "2004",
doi = "10.1016/j.mee.2004.03.023",
language = "English",
volume = "73-74",
pages = "491--495",
journal = "Microelectronic Engineering",
issn = "1873-5568",
publisher = "Elsevier",

}