Long-wavelength intersubband quantum disc-in-nanowire photodetectors with normal incidence photoresponse

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Long-wavelength intersubband quantum disc-in-nanowire photodetectors with normal incidence photoresponse. / Karimi, Mohammad; Limpert, Steven; Borgström, Magnus; Samuelson, Lars; Pettersson, Håkan.

2018. Abstract från QSIP 2018
Quantum Structure Infrared Photodetectors Conference, stockholm, Sverige.

Forskningsoutput: KonferensbidragKonferensabstract

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APA

Karimi, M., Limpert, S., Borgström, M., Samuelson, L., & Pettersson, H. (2018). Long-wavelength intersubband quantum disc-in-nanowire photodetectors with normal incidence photoresponse. Abstract från QSIP 2018
Quantum Structure Infrared Photodetectors Conference, stockholm, Sverige.

CBE

Karimi M, Limpert S, Borgström M, Samuelson L, Pettersson H. 2018. Long-wavelength intersubband quantum disc-in-nanowire photodetectors with normal incidence photoresponse. Abstract från QSIP 2018
Quantum Structure Infrared Photodetectors Conference, stockholm, Sverige.

MLA

Vancouver

Karimi M, Limpert S, Borgström M, Samuelson L, Pettersson H. Long-wavelength intersubband quantum disc-in-nanowire photodetectors with normal incidence photoresponse. 2018. Abstract från QSIP 2018
Quantum Structure Infrared Photodetectors Conference, stockholm, Sverige.

Author

Karimi, Mohammad ; Limpert, Steven ; Borgström, Magnus ; Samuelson, Lars ; Pettersson, Håkan. / Long-wavelength intersubband quantum disc-in-nanowire photodetectors with normal incidence photoresponse. Abstract från QSIP 2018
Quantum Structure Infrared Photodetectors Conference, stockholm, Sverige.

RIS

TY - CONF

T1 - Long-wavelength intersubband quantum disc-in-nanowire photodetectors with normal incidence photoresponse

AU - Karimi, Mohammad

AU - Limpert, Steven

AU - Borgström, Magnus

AU - Samuelson, Lars

AU - Pettersson, Håkan

PY - 2018

Y1 - 2018

N2 - Semiconductor nanowire (NW) technology has emerged as a key facilitator of novel optoelectronics e.g. solar cells, photodetectors and LEDs. The functional wavelength range of current NW-based photodetectors is typically limited to the visible/near-infrared region. In this work, we present the first ever reported electrical and optical characteristics of longwavelength IR photodetectors based on largesquare millimeter ensembles of vertically grown and processed InAsP/InP heterostructure NWs grown on InP substrates1. More specifically, the MOVPE-grownNWs comprise single or multiple InAsP quantum discs (QDiscs) axially embedded in an n+-i-n+ geometry. The NWs are contacted together in a vertical geometryby uniformly depositing a thin insulating SiO2 layer, selective etching of the oxide from the tip of the NWs followed by sputtering of ITO as a common topcontact to all NWs. Using Fourier transform photocurrent spectroscopy, we demonstrate a photoresponse extending from the visible to far infrared1,2.In particular, the infrared response from 3-20 μm is enabled by intersubband transitions in the lowbandgap InAsP quantum discs synthesized axiallywithin the InP NWs. The detector elements exhibit an unexpected sensitivity to normal incident radiation, apparently in contradiction to well-known selection rulesfor intersubband transitions in quantum wells. From in-depth 2D and 3D optical simulations we attribute this result to an excitation of the longitudinal component ofoptical modes in the photonic crystal formed by the nanostructured portion of the detectors. Key advantages with the proposed design include a large degree offreedom in choice of material compositions, enhanced optical resonance effects due to periodically ordered NW arrays and the compatibility with silicon substrates.We believe that our novel detector design offers a route towards monolithic integration of compact and sensitive broadband III-V NW detectors with main-streamsilicon technology which could seriously challenge existing commercially available photodetectors.

AB - Semiconductor nanowire (NW) technology has emerged as a key facilitator of novel optoelectronics e.g. solar cells, photodetectors and LEDs. The functional wavelength range of current NW-based photodetectors is typically limited to the visible/near-infrared region. In this work, we present the first ever reported electrical and optical characteristics of longwavelength IR photodetectors based on largesquare millimeter ensembles of vertically grown and processed InAsP/InP heterostructure NWs grown on InP substrates1. More specifically, the MOVPE-grownNWs comprise single or multiple InAsP quantum discs (QDiscs) axially embedded in an n+-i-n+ geometry. The NWs are contacted together in a vertical geometryby uniformly depositing a thin insulating SiO2 layer, selective etching of the oxide from the tip of the NWs followed by sputtering of ITO as a common topcontact to all NWs. Using Fourier transform photocurrent spectroscopy, we demonstrate a photoresponse extending from the visible to far infrared1,2.In particular, the infrared response from 3-20 μm is enabled by intersubband transitions in the lowbandgap InAsP quantum discs synthesized axiallywithin the InP NWs. The detector elements exhibit an unexpected sensitivity to normal incident radiation, apparently in contradiction to well-known selection rulesfor intersubband transitions in quantum wells. From in-depth 2D and 3D optical simulations we attribute this result to an excitation of the longitudinal component ofoptical modes in the photonic crystal formed by the nanostructured portion of the detectors. Key advantages with the proposed design include a large degree offreedom in choice of material compositions, enhanced optical resonance effects due to periodically ordered NW arrays and the compatibility with silicon substrates.We believe that our novel detector design offers a route towards monolithic integration of compact and sensitive broadband III-V NW detectors with main-streamsilicon technology which could seriously challenge existing commercially available photodetectors.

M3 - Abstract

ER -