Magnetoresistance studies on Co/AlOX/Au and Co/AlOX/Ni/Au tunnel structures

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Magnetoresistance studies on Co/AlOX/Au and Co/AlOX/Ni/Au tunnel structures. / Liu, Ruisheng; Canali, C. M.; Samuelson, Lars; Pettersson, H.

I: Applied Physics Letters, Vol. 93, Nr. 20, 203107, 2008.

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Liu, Ruisheng ; Canali, C. M. ; Samuelson, Lars ; Pettersson, H. / Magnetoresistance studies on Co/AlOX/Au and Co/AlOX/Ni/Au tunnel structures. I: Applied Physics Letters. 2008 ; Vol. 93, Nr. 20.

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TY - JOUR

T1 - Magnetoresistance studies on Co/AlOX/Au and Co/AlOX/Ni/Au tunnel structures

AU - Liu, Ruisheng

AU - Canali, C. M.

AU - Samuelson, Lars

AU - Pettersson, H

PY - 2008

Y1 - 2008

N2 - We report on magnetoresistance (MR) studies on Co/AlOX/Au and Co/AlOX/Ni/Au magnetic tunnel junctions. In spite of the fact that the difference between the two samples is merely a 3 nm thick Ni layer, there is a sharp contrast in MR behavior indicating that the electronic structure at the interface between the ferromagnetic electrodes and the insulating barrier dominates the MR signal. The former sample exhibits a clear tunneling anisotropic MR (TAMR), with the characteristic correlation between resistance and current direction, in contrast to the latter sample which displays a conventional tunneling MR (TMR) dominated by the relative orientation between the magnetization directions of the two electrodes. In addition, the TAMR has a much stronger temperature dependence than the TMR, indicating a much faster drop-off of the tunneling density of states anisotropy than the tunneling electron spin polarization with increasing temperature. Finally, we propose a possible simple way to distinguish TAMR from normal TMR by measuring the resistance of the device at different angles of the external magnetic field.

AB - We report on magnetoresistance (MR) studies on Co/AlOX/Au and Co/AlOX/Ni/Au magnetic tunnel junctions. In spite of the fact that the difference between the two samples is merely a 3 nm thick Ni layer, there is a sharp contrast in MR behavior indicating that the electronic structure at the interface between the ferromagnetic electrodes and the insulating barrier dominates the MR signal. The former sample exhibits a clear tunneling anisotropic MR (TAMR), with the characteristic correlation between resistance and current direction, in contrast to the latter sample which displays a conventional tunneling MR (TMR) dominated by the relative orientation between the magnetization directions of the two electrodes. In addition, the TAMR has a much stronger temperature dependence than the TMR, indicating a much faster drop-off of the tunneling density of states anisotropy than the tunneling electron spin polarization with increasing temperature. Finally, we propose a possible simple way to distinguish TAMR from normal TMR by measuring the resistance of the device at different angles of the external magnetic field.

KW - nickel

KW - magnetisation

KW - tunnelling magnetoresistance

KW - magnetic thin films

KW - gold

KW - ferromagnetic materials

KW - polarisation

KW - electron spin

KW - cobalt

KW - aluminium compounds

KW - band structure

U2 - 10.1063/1.3000614

DO - 10.1063/1.3000614

M3 - Article

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 20

M1 - 203107

ER -