Microscopic four-point-probe resistivity measurements of shallow, high density doping layers in silicon

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We present room temperature resistivity measurements of shallow, monolayer doped phosphorus in silicon, a material system of interest for both conventional microelectronic manufacturing, and future quantum electronic devices. Using an in-situ variable spacing microscopic four-probe system, we demonstrate the ability to separate the conductivity of the substrate and the doping layer. We show that the obtained sensitivity to the dopant layer derives from a combination of the nanoscale contacting areas and the conductivity difference between the highly doped 2D layer and the substrate. At an encapsulation depth of only 4 nm, we demonstrate a room temperature resistivity of 1.4k Omega/square. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4773485]


  • Craig M. Polley
  • Warrick R. Clarke
  • Jill A. Miwa
  • Michelle Y. Simmons
  • Justin Wells
Enheter & grupper

Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Fysik
  • Naturvetenskap
TidskriftApplied Physics Letters
Utgåva nummer26
StatusPublished - 2012
Peer review utfördJa