Modeling the formation of InP/GaxIn1-xP axial nanowire heterostructures

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Abstract

A model is developed to depict the formation of InP/GaxIn1-xP axial heterostructures in self-catalyzed GaxIn1-xP nanowires. The composition profiles of the InP/GaxIn1-xP axial heterostructure are calculated taking into account elastic stresses. It is shown that the InP/GaxIn1-xP axial heterojunction width at the growth temperature of 450°C is larger than 12 monolayers for nanowires with the radius larger than 10 nm. Also, the comparison with GaxIn1-xAs system is performed and reveals that the InP/GaxIn1-xP axial heterojunction width is approximately two times smaller than the InAs/GaxIn1-xAs axial heterojunction width.

Detaljer

Författare
Enheter & grupper
Externa organisationer
  • St. Petersburg Academic University
  • National Research University of Information Technologies
Forskningsområden

Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Den kondenserade materiens fysik
Originalspråkengelska
Artikelnummer012058
TidskriftJournal of Physics: Conference Series
Volym1410
Utgåva nummer1
StatusPublished - 2019
PublikationskategoriForskning
Peer review utfördJa
Evenemang6th International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures, SPbOPEN 2019 - Saint Petersburg, Ryssland
Varaktighet: 2019 apr 222019 apr 25