Modeling the formation of InP/GaxIn1-xP axial nanowire heterostructures

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Bibtex

@article{d797236ddb4a4c379d381bcc01fcd7a6,
title = "Modeling the formation of InP/GaxIn1-xP axial nanowire heterostructures",
abstract = "A model is developed to depict the formation of InP/GaxIn1-xP axial heterostructures in self-catalyzed GaxIn1-xP nanowires. The composition profiles of the InP/GaxIn1-xP axial heterostructure are calculated taking into account elastic stresses. It is shown that the InP/GaxIn1-xP axial heterojunction width at the growth temperature of 450°C is larger than 12 monolayers for nanowires with the radius larger than 10 nm. Also, the comparison with GaxIn1-xAs system is performed and reveals that the InP/GaxIn1-xP axial heterojunction width is approximately two times smaller than the InAs/GaxIn1-xAs axial heterojunction width.",
author = "Koryakin, {A. A.} and Leshchenko, {E. D.} and Dubrovskii, {V. G.}",
year = "2019",
doi = "10.1088/1742-6596/1410/1/012058",
language = "English",
volume = "1410",
journal = "Journal of Physics: Conference Series",
issn = "1742-6596",
publisher = "IOP Publishing",
number = "1",

}