Modeling the formation of InP/GaxIn1-xP axial nanowire heterostructures

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Modeling the formation of InP/GaxIn1-xP axial nanowire heterostructures. / Koryakin, A. A.; Leshchenko, E. D.; Dubrovskii, V. G.

I: Journal of Physics: Conference Series, Vol. 1410, Nr. 1, 012058, 2019.

Forskningsoutput: TidskriftsbidragArtikel i vetenskaplig tidskrift

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TY - JOUR

T1 - Modeling the formation of InP/GaxIn1-xP axial nanowire heterostructures

AU - Koryakin, A. A.

AU - Leshchenko, E. D.

AU - Dubrovskii, V. G.

PY - 2019

Y1 - 2019

N2 - A model is developed to depict the formation of InP/GaxIn1-xP axial heterostructures in self-catalyzed GaxIn1-xP nanowires. The composition profiles of the InP/GaxIn1-xP axial heterostructure are calculated taking into account elastic stresses. It is shown that the InP/GaxIn1-xP axial heterojunction width at the growth temperature of 450°C is larger than 12 monolayers for nanowires with the radius larger than 10 nm. Also, the comparison with GaxIn1-xAs system is performed and reveals that the InP/GaxIn1-xP axial heterojunction width is approximately two times smaller than the InAs/GaxIn1-xAs axial heterojunction width.

AB - A model is developed to depict the formation of InP/GaxIn1-xP axial heterostructures in self-catalyzed GaxIn1-xP nanowires. The composition profiles of the InP/GaxIn1-xP axial heterostructure are calculated taking into account elastic stresses. It is shown that the InP/GaxIn1-xP axial heterojunction width at the growth temperature of 450°C is larger than 12 monolayers for nanowires with the radius larger than 10 nm. Also, the comparison with GaxIn1-xAs system is performed and reveals that the InP/GaxIn1-xP axial heterojunction width is approximately two times smaller than the InAs/GaxIn1-xAs axial heterojunction width.

U2 - 10.1088/1742-6596/1410/1/012058

DO - 10.1088/1742-6596/1410/1/012058

M3 - Article

VL - 1410

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6596

IS - 1

M1 - 012058

ER -