Mott variable-range hopping transport in a MoS2 nanoflake

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Abstract

The transport characteristics of a disordered, multilayered MoS2 nanoflake in the insulator regime are studied by electrical and magnetotransport measurements. The MoS2 nanoflake is exfoliated from a bulk MoS2 crystal and the conductance G and magnetoresistance are measured in a four-probe setup over a wide range of temperatures. At high temperatures, we observe that lnG exhibits a -T-1 temperature dependence and the transport in the nanoflake dominantly arises from thermal activation. At low temperatures, where the transport in the nanoflake dominantly takes place via variable-range hopping (VRH) processes, we observe that lnG exhibits a -T-1/3 temperature dependence, an evidence for the two-dimensional (2D) Mott VRH transport. Furthermore, we observe that the measured low-field magnetoresistance of the nanoflake in the insulator regime exhibits a quadratic magnetic field dependence ∼ αB2 with α ∼ T-1, fully consistent with the 2D Mott VRH transport in the nanoflake.

Detaljer

Författare
  • Jianhong Xue
  • Shaoyun Huang
  • Ji Yin Wang
  • H. Q. Xu
Enheter & grupper
Externa organisationer
  • Peking University
  • Beijing Academy of Quantum Information Sciences
Forskningsområden

Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Nanoteknik
Originalspråkengelska
Sidor (från-till)17885-17890
Antal sidor6
TidskriftRSC Advances
Volym9
Utgivningsnummer31
StatusPublished - 2019
PublikationskategoriForskning
Peer review utfördJa