Nanoimprint technology for fabrication of three-terminal ballistic junction devices in GaInAs/InP

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Abstract

We present processing technology based on nanoimprint lithography (NIL) and wet etching for fabrication of GaInAs/InP three-terminal ballistic junction (TBJ) devices. To transfer sub-100 nm features into a high-mobility InP-based 2DEG material, we used SiO2/Si stamps made with electron beam lithography and reactive ion etching. After the NIL, the resist residues are removed in oxygen plasma followed by wet etching of GaInAs/InP to define the M-structures. Fabricated TBJ-devices are characterized using scanning electron microscopy and electron transport measurements. Highly non-linear electrical characteristics of the TBJ structures are demonstrated and compared with E-beam defined devices. (C) 2003 Elsevier Science B.V. All rights reserved.

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Nyckelord

Originalspråkengelska
Sidor (från-till)196-202
TidskriftMicroelectronic Engineering
Volym67-8
StatusPublished - 2003
PublikationskategoriForskning
Peer review utfördJa