Nanometer-scale two-terminal semiconductor memory operating at room temperature

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Abstract

Based on a nanometer-scale semiconductor channel with an intentionally broken geometric symmetry, we have realized a type of memory device that consists of only two terminals, rather than the minimum of three terminals in conventional semiconductor memories. The charge retention time is at least 10 h at cryogenic temperatures and a few minutes at room temperature. Furthermore, the simplicity of the design allows the active part of the devices to be made in a single nanolithography step which, along with the planar structure of the device, provides promising possibilities for a high integration density. (C) 2005 American Institute of Physics.

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Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Den kondenserade materiens fysik
Originalspråkengelska
Artikelnummer042106
TidskriftApplied Physics Letters
Volym86
Utgåva nummer4
StatusPublished - 2005
PublikationskategoriForskning
Peer review utfördJa