Nanowire-based multiple quantum dot memory

Forskningsoutput: TidskriftsbidragArtikel i vetenskaplig tidskrift

Abstract

The authors propose and demonstrate an alternative memory concept in which a storage island is connected to a nanowire containing a stack of nine InAs quantum dots, each separated by thin InP tunnel barriers. Transport through the quantum dot structure is suppressed for a particular biasing window due to misalignment of the energy levels. This leads to hysteresis in the charging/discharging of the storage island. The memory operates for temperatures up to around 150 K and has write times down to at least 15 ns. A comparison is made to a nanowire memory based on a single, thick InP barrier.

Detaljer

Författare
Enheter & grupper
Forskningsområden

Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Den kondenserade materiens fysik
  • Kemi
Originalspråkengelska
Artikelnummer163101
TidskriftApplied Physics Letters
Volym89
Utgåva nummer16
StatusPublished - 2006
PublikationskategoriForskning
Peer review utfördJa