Nonlinear electrical properties of Si three-terminal junction devices

Forskningsoutput: TidskriftsbidragArtikel i vetenskaplig tidskrift

Abstract

This letter reports on the realization and characterization of silicon three-terminal junction devices made in a silicon-on-insulator wafer. Room temperature electrical measurements show that the fabricated devices exhibit pronounced nonlinear electrical properties inherent to ballistic electron transport in a three-terminal ballistic junction (TBJ) device. The results show that room temperature functional TBJ devices can be realized in a semiconductor material other than high-mobility III-V semiconductor heterostructures and provide a simple design principle for compact silicon devices in nanoelectronics. (C) 2010 American Institute of Physics. [doi:10.1063/1.3526725]

Detaljer

Författare
  • Fantao Meng
  • Jie Sun
  • Mariusz Graczyk
  • Kailiang Zhang
  • Mika Prunnila
  • Jouni Ahopelto
  • Peixiong Shi
  • Jinkui Chu
  • Ivan Maximov
  • Hongqi Xu
Enheter & grupper
Forskningsområden

Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Den kondenserade materiens fysik
Originalspråkengelska
Artikelnummer242106
TidskriftApplied Physics Letters
Volym97
Utgåva nummer24
StatusPublished - 2010
PublikationskategoriForskning
Peer review utfördJa