Nonlinear electrical properties of Si three-terminal junction devices

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Nonlinear electrical properties of Si three-terminal junction devices. / Meng, Fantao; Sun, Jie; Graczyk, Mariusz; Zhang, Kailiang; Prunnila, Mika; Ahopelto, Jouni; Shi, Peixiong; Chu, Jinkui; Maximov, Ivan; Xu, Hongqi.

I: Applied Physics Letters, Vol. 97, Nr. 24, 242106, 2010.

Forskningsoutput: TidskriftsbidragArtikel i vetenskaplig tidskrift

Harvard

Meng, F, Sun, J, Graczyk, M, Zhang, K, Prunnila, M, Ahopelto, J, Shi, P, Chu, J, Maximov, I & Xu, H 2010, 'Nonlinear electrical properties of Si three-terminal junction devices', Applied Physics Letters, vol. 97, nr. 24, 242106. https://doi.org/10.1063/1.3526725

APA

Meng, F., Sun, J., Graczyk, M., Zhang, K., Prunnila, M., Ahopelto, J., Shi, P., Chu, J., Maximov, I., & Xu, H. (2010). Nonlinear electrical properties of Si three-terminal junction devices. Applied Physics Letters, 97(24), [242106]. https://doi.org/10.1063/1.3526725

CBE

Meng F, Sun J, Graczyk M, Zhang K, Prunnila M, Ahopelto J, Shi P, Chu J, Maximov I, Xu H. 2010. Nonlinear electrical properties of Si three-terminal junction devices. Applied Physics Letters. 97(24):Article 242106. https://doi.org/10.1063/1.3526725

MLA

Vancouver

Meng F, Sun J, Graczyk M, Zhang K, Prunnila M, Ahopelto J et al. Nonlinear electrical properties of Si three-terminal junction devices. Applied Physics Letters. 2010;97(24). 242106. https://doi.org/10.1063/1.3526725

Author

Meng, Fantao ; Sun, Jie ; Graczyk, Mariusz ; Zhang, Kailiang ; Prunnila, Mika ; Ahopelto, Jouni ; Shi, Peixiong ; Chu, Jinkui ; Maximov, Ivan ; Xu, Hongqi. / Nonlinear electrical properties of Si three-terminal junction devices. I: Applied Physics Letters. 2010 ; Vol. 97, Nr. 24.

RIS

TY - JOUR

T1 - Nonlinear electrical properties of Si three-terminal junction devices

AU - Meng, Fantao

AU - Sun, Jie

AU - Graczyk, Mariusz

AU - Zhang, Kailiang

AU - Prunnila, Mika

AU - Ahopelto, Jouni

AU - Shi, Peixiong

AU - Chu, Jinkui

AU - Maximov, Ivan

AU - Xu, Hongqi

PY - 2010

Y1 - 2010

N2 - This letter reports on the realization and characterization of silicon three-terminal junction devices made in a silicon-on-insulator wafer. Room temperature electrical measurements show that the fabricated devices exhibit pronounced nonlinear electrical properties inherent to ballistic electron transport in a three-terminal ballistic junction (TBJ) device. The results show that room temperature functional TBJ devices can be realized in a semiconductor material other than high-mobility III-V semiconductor heterostructures and provide a simple design principle for compact silicon devices in nanoelectronics. (C) 2010 American Institute of Physics. [doi:10.1063/1.3526725]

AB - This letter reports on the realization and characterization of silicon three-terminal junction devices made in a silicon-on-insulator wafer. Room temperature electrical measurements show that the fabricated devices exhibit pronounced nonlinear electrical properties inherent to ballistic electron transport in a three-terminal ballistic junction (TBJ) device. The results show that room temperature functional TBJ devices can be realized in a semiconductor material other than high-mobility III-V semiconductor heterostructures and provide a simple design principle for compact silicon devices in nanoelectronics. (C) 2010 American Institute of Physics. [doi:10.1063/1.3526725]

U2 - 10.1063/1.3526725

DO - 10.1063/1.3526725

M3 - Article

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 24

M1 - 242106

ER -