Observation of twin-free GaAs nanowire growth using template-assisted selective epitaxy

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Abstract

We report on the structural characterization of GaAs nanowires integrated on Si(001) by template-assisted selective epitaxy. The nanowires were grown in lateral SiO2 templates along [110] with varying V/III ratios and temperatures using metal-organic chemical vapor deposition. The nanowires have been categorized depending on the growth facets which typically consisted of (110) and (111)B planes. Nanowires exhibiting a (111)B growth facet were found to have high density planar defects for all growth conditions investigated. However, GaAs nanowires with a single (110) growth facet were grown without the formation of planar stacking faults, resulting in a pure zinc blende crystal.

Detaljer

Författare
  • Moritz Knoedler
  • Nicolas Bologna
  • Heinz Schmid
  • Mattias Borg
  • Kirsten E. Moselund
  • Stephan Wirths
  • Marta D. Rossell
  • Heike Riel
Enheter & grupper
Externa organisationer
  • IBM Research Zurich
  • Swiss Federal Laboratories for Materials Science and Technology
Forskningsområden

Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Annan elektroteknik och elektronik
Originalspråkengelska
Sidor (från-till)6297-6302
Antal sidor6
TidskriftCrystal Growth and Design
Volym17
Utgivningsnummer12
StatusPublished - 2017 jan 1
PublikationskategoriForskning
Peer review utfördJa