Observation of twin-free GaAs nanowire growth using template-assisted selective epitaxy

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Observation of twin-free GaAs nanowire growth using template-assisted selective epitaxy. / Knoedler, Moritz; Bologna, Nicolas; Schmid, Heinz; Borg, Mattias; Moselund, Kirsten E.; Wirths, Stephan; Rossell, Marta D.; Riel, Heike.

I: Crystal Growth and Design, Vol. 17, Nr. 12, 01.01.2017, s. 6297-6302.

Forskningsoutput: TidskriftsbidragArtikel i vetenskaplig tidskrift

Harvard

Knoedler, M, Bologna, N, Schmid, H, Borg, M, Moselund, KE, Wirths, S, Rossell, MD & Riel, H 2017, 'Observation of twin-free GaAs nanowire growth using template-assisted selective epitaxy', Crystal Growth and Design, vol. 17, nr. 12, s. 6297-6302. https://doi.org/10.1021/acs.cgd.7b00983

APA

Knoedler, M., Bologna, N., Schmid, H., Borg, M., Moselund, K. E., Wirths, S., ... Riel, H. (2017). Observation of twin-free GaAs nanowire growth using template-assisted selective epitaxy. Crystal Growth and Design, 17(12), 6297-6302. https://doi.org/10.1021/acs.cgd.7b00983

CBE

MLA

Vancouver

Author

Knoedler, Moritz ; Bologna, Nicolas ; Schmid, Heinz ; Borg, Mattias ; Moselund, Kirsten E. ; Wirths, Stephan ; Rossell, Marta D. ; Riel, Heike. / Observation of twin-free GaAs nanowire growth using template-assisted selective epitaxy. I: Crystal Growth and Design. 2017 ; Vol. 17, Nr. 12. s. 6297-6302.

RIS

TY - JOUR

T1 - Observation of twin-free GaAs nanowire growth using template-assisted selective epitaxy

AU - Knoedler, Moritz

AU - Bologna, Nicolas

AU - Schmid, Heinz

AU - Borg, Mattias

AU - Moselund, Kirsten E.

AU - Wirths, Stephan

AU - Rossell, Marta D.

AU - Riel, Heike

PY - 2017/1/1

Y1 - 2017/1/1

N2 - We report on the structural characterization of GaAs nanowires integrated on Si(001) by template-assisted selective epitaxy. The nanowires were grown in lateral SiO2 templates along [110] with varying V/III ratios and temperatures using metal-organic chemical vapor deposition. The nanowires have been categorized depending on the growth facets which typically consisted of (110) and (111)B planes. Nanowires exhibiting a (111)B growth facet were found to have high density planar defects for all growth conditions investigated. However, GaAs nanowires with a single (110) growth facet were grown without the formation of planar stacking faults, resulting in a pure zinc blende crystal.

AB - We report on the structural characterization of GaAs nanowires integrated on Si(001) by template-assisted selective epitaxy. The nanowires were grown in lateral SiO2 templates along [110] with varying V/III ratios and temperatures using metal-organic chemical vapor deposition. The nanowires have been categorized depending on the growth facets which typically consisted of (110) and (111)B planes. Nanowires exhibiting a (111)B growth facet were found to have high density planar defects for all growth conditions investigated. However, GaAs nanowires with a single (110) growth facet were grown without the formation of planar stacking faults, resulting in a pure zinc blende crystal.

UR - http://www.scopus.com/inward/record.url?scp=85044516952&partnerID=8YFLogxK

U2 - 10.1021/acs.cgd.7b00983

DO - 10.1021/acs.cgd.7b00983

M3 - Article

VL - 17

SP - 6297

EP - 6302

JO - Crystal Growth and Design

JF - Crystal Growth and Design

SN - 1528-7483

IS - 12

ER -