One-dimensional heterostructures in semiconductor nanowhiskers

Forskningsoutput: TidskriftsbidragArtikel i vetenskaplig tidskrift

Abstract

We report on the growth of designed heterostructures placed within semiconductor nanowhiskers, exemplified by the InAs/InP material system. Based on transmission electron microscopy, we deduce the interfaces between InAs and InP to be atomically sharp. Electrical measurements of thermionic emission across an 80-nm-wide InP heterobarrier, positioned inside InAs whiskers 40 nm in diameter, yield a barrier height of 0.6 eV. On the basis of these results, we propose new branches of physics phenomena as well as new families of device structures that will now be possible to realize and explore.

Detaljer

Författare
Enheter & grupper
Forskningsområden

Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Den kondenserade materiens fysik
  • Kemi
Originalspråkengelska
Sidor (från-till)1058-1060
TidskriftApplied Physics Letters
Volym80
Utgåva nummer6
StatusPublished - 2002
PublikationskategoriForskning
Peer review utfördJa