Optimization of Near-Surface Quantum Well Processing

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Abstract

Herein, an optimized process flow of near-surface quantum well metal–oxide–semiconductor field-effect transistors (MOSFETs) based on planar layers of metalorganic vapor-phase epitaxy (MOVPE) grown InxGa1−xAs is presented. It is found that by an optimized pre-growth cleaning and post-metal anneal, the quality of the MOS structure can be greatly enhanced. This optimization is a first step toward realization of a scalable platform for topological qubits based on a well-defined network of lateral InxGa1−xAs nanowires grown by selective area growth.

Detaljer

Författare
Enheter & grupper
Forskningsområden

Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Den kondenserade materiens fysik
  • Nanoteknik

Nyckelord

Originalspråkengelska
Artikelnummer2000720
TidskriftPhysica Status Solidi (A) Applications and Materials Science
Volym218
Utgåva nummer7
Tidigt onlinedatum2021 jan 12
StatusPublished - 2021
PublikationskategoriForskning
Peer review utfördJa