Photoelectrical response of hybrid graphene-PbS quantum dot devices

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Photoelectrical response of hybrid graphene-PbS quantum dot devices. / Huang, Y. Q.; Zhu, R. J.; Kang, N.; Du, J.; Xu, Hongqi.

I: Applied Physics Letters, Vol. 103, Nr. 14, 143119, 2013.

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Huang, Y. Q. ; Zhu, R. J. ; Kang, N. ; Du, J. ; Xu, Hongqi. / Photoelectrical response of hybrid graphene-PbS quantum dot devices. I: Applied Physics Letters. 2013 ; Vol. 103, Nr. 14.

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TY - JOUR

T1 - Photoelectrical response of hybrid graphene-PbS quantum dot devices

AU - Huang, Y. Q.

AU - Zhu, R. J.

AU - Kang, N.

AU - Du, J.

AU - Xu, Hongqi

PY - 2013

Y1 - 2013

N2 - Hybrid graphene-PbS quantum dot devices are fabricated on an n-type silicon substrate capped with a thin SiO2 layer and are characterized by photoelectrical measurements. It is shown that the resistance of the graphene channel in the devices exhibits detectable changes when a laser beam is switched on and off on the quantum dots. The model that explains the observed photoresponse phenomenon is illustrated. We also show that the photoresponse signal, i.e., the photoinduced change in the resistance of the graphene channel can be tuned in both magnitude and sign with a voltage applied to the back gate of the devices and is related to the derivative of the transfer characteristics of the graphene channel. Our work shows that the simple hybrid graphene-PbS quantum dot devices can be employed for photodetection applications. (C) 2013 AIP Publishing LLC.

AB - Hybrid graphene-PbS quantum dot devices are fabricated on an n-type silicon substrate capped with a thin SiO2 layer and are characterized by photoelectrical measurements. It is shown that the resistance of the graphene channel in the devices exhibits detectable changes when a laser beam is switched on and off on the quantum dots. The model that explains the observed photoresponse phenomenon is illustrated. We also show that the photoresponse signal, i.e., the photoinduced change in the resistance of the graphene channel can be tuned in both magnitude and sign with a voltage applied to the back gate of the devices and is related to the derivative of the transfer characteristics of the graphene channel. Our work shows that the simple hybrid graphene-PbS quantum dot devices can be employed for photodetection applications. (C) 2013 AIP Publishing LLC.

U2 - 10.1063/1.4824113

DO - 10.1063/1.4824113

M3 - Article

VL - 103

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 14

M1 - 143119

ER -