Photoemission study of the valence band offset between low temperature GaAs and (GaMn)As

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Abstract

Using synchrotron based photoelectron spectroscopy (GaMn) AsGaAs interfaces prepared in situ by low temperature molecular beam epitaxy have been studied. No band offset between the two systems is observed. The continuous transition is explained as an effect of dilution of the (GaMn)As by GaAs adlayers.

Detaljer

Författare
  • M. Adell
  • J. Adell
  • L. Ilver
  • J. Kanski
  • J. Sadowski
Enheter & grupper
Externa organisationer
  • Chalmers Tekniska Högskola
  • Polish Academy of Sciences
Originalspråkengelska
Artikelnummer172509
TidskriftApplied Physics Letters
Volym89
Utgåva nummer17
StatusPublished - 2006
PublikationskategoriForskning
Peer review utfördJa