Photoluminescence study of Zn-doped wurtzite InP core-shell nanowires

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Abstract

In situ Zn doping of InP shells on nanowires in the wurtzite crystal structure has been investigated using diethyl zinc (DEZn) as a precursor. Photoluminescence measurements of single nanowires unexpectedly exhibit an acceptor-related peak at room temperature, in contrast to thin films grown at identical conditions. This peak is observable even using low DEZn molar fractions, which indicates efficient Zn incorporation at the InP wurtzite facets. The spectra indicate a 52 meV binding energy for the Zn acceptor in wurtzite, which is higher than that of bulk zinc blende. These results demonstrate that in situ Zn doping of wurtzite InP nanowire shells can be achieved. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4788925]

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Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Den kondenserade materiens fysik
Originalspråkengelska
Artikelnummer032105
TidskriftApplied Physics Letters
Volym102
Utgåva nummer3
StatusPublished - 2013
PublikationskategoriForskning
Peer review utfördJa