Photon mapping of quantum dots using a scanning tunneling microscope

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Abstract

Scanning tunneling microscopy (STM) and scanning tunneling luminescence (STL) have been used to investigate the geometric and optical properties of individual self-assembled InP quantum dots overgrown with a thin layer of GaInP. STL spectra and monochromatic photon maps were used to correlate the surface topography with the optical properties of single quantum dots. We find a spatial resolution of about 10 nm in the photon maps. Theoretical emission spectra were calculated by six-band k.p theory using a realistic shape of the dot as well as of the cap layer. The calculated emission spectrum of a single dot is in good agreement with the experimental findings. (C) 2002 American Institute of Physics.

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Forskningsområden

Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Den kondenserade materiens fysik
Originalspråkengelska
Sidor (från-till)4443-4445
TidskriftApplied Physics Letters
Volym81
Utgåva nummer23
StatusPublished - 2002
PublikationskategoriForskning
Peer review utfördJa