Postgrowth annealing of (Ga,Mn) As under As capping: An alternative way to increase T-C

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Abstract

In situ postgrowth annealing of (Ga,Mn)As layers under As capping is adequate for achieving high Curie temperatures (T-C) in a similar way as ex situ annealing in air or in N-2 atmosphere practiced earlier. Thus, the first efforts give an increase of T-C from 68 to 145 K after 2 h annealing at 180 degrees C. These data, in combination with lattice parameter determinations and photoemission results, show that the As capping acts as an efficient sink for diffusing Mn interstitials.

Detaljer

Författare
  • Martin Adell
  • L Ilver
  • J Kanski
  • V Stanciu
  • P Svedlindh
  • J Sadowski
  • JZ Domagala
  • F Terki
  • C Hernandez
  • S Charar
Enheter & grupper
Forskningsområden

Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Fysik
  • Naturvetenskap
Originalspråkengelska
TidskriftApplied Physics Letters
Volym86
Utgåva nummer11
StatusPublished - 2005
PublikationskategoriForskning
Peer review utfördJa