Quadruples of Ge dots grown on patterned Si surfaces

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Abstract

In this paper, we present the results of Ge deposition on a pre-pattemed Si surface. By partially overgrowing nanometer-sized electron beam-induced carbon deposits, faceted pits form at the Si surface and well-defined arrays of self-assembled Ge dots can be grown site selectively in and around those. Typically, four closely spaced Ge islands are formed by preferential nucleation around the pits. By varying the pattern of C-deposits a manifold of different arrays can be obtained. (C) 2003 Elsevier B.V. All rights reserved.

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Nyckelord

Originalspråkengelska
Sidor (från-till)262-266
TidskriftJournal of Crystal Growth
Volym259
Utgivningsnummer3
StatusPublished - 2003
PublikationskategoriForskning
Peer review utfördJa