Remnant magnetoresistance in ferromagnetic (Ga,Mn)As nanostructures

Forskningsoutput: TidskriftsbidragArtikel i vetenskaplig tidskrift

Abstract

The authors show a magnetoresistive effect that appears in a lithographically shaped, three-arm nanostructure fabricated from ferromagnetic (Ga,Mn)As layers. The effect, related to a rearrangement of magnetic domain walls between different pairs of arms in the structure, is revealed as a dependence of zero-field resistance on the direction of the previously applied magnetic field. This effect could allow designing devices with unique switching and memory properties.

Detaljer

Författare
  • T. Figielski
  • T. Wosinski
  • A. Morawski
  • A. Makosa
  • J. Wrobel
  • Janusz Sadowski
Enheter & grupper
Forskningsområden

Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Naturvetenskap
  • Fysik
Originalspråkengelska
TidskriftApplied Physics Letters
Volym90
Utgåva nummer5
StatusPublished - 2007
PublikationskategoriForskning
Peer review utfördJa