Resonant tunneling through coupled self-assembled quantum dots and the influence of inhomogeneous broadening

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Standard

Resonant tunneling through coupled self-assembled quantum dots and the influence of inhomogeneous broadening. / Bryllert, Tomas; Borgström, Magnus; Sass, T.; Gustafson, Boel; Landin, L.; Wernersson, Lars-Erik; Seifert, Werner; Samuelson, Lars.

7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science. Lund University, 2002.

Forskningsoutput: Kapitel i bok/rapport/Conference proceedingKonferenspaper i proceeding

Harvard

Bryllert, T, Borgström, M, Sass, T, Gustafson, B, Landin, L, Wernersson, L-E, Seifert, W & Samuelson, L 2002, Resonant tunneling through coupled self-assembled quantum dots and the influence of inhomogeneous broadening. i 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science. Lund University, Malmö, Sverige, 2002/06/24.

APA

Bryllert, T., Borgström, M., Sass, T., Gustafson, B., Landin, L., Wernersson, L-E., ... Samuelson, L. (2002). Resonant tunneling through coupled self-assembled quantum dots and the influence of inhomogeneous broadening. I 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science Lund University.

CBE

Bryllert T, Borgström M, Sass T, Gustafson B, Landin L, Wernersson L-E, Seifert W, Samuelson L. 2002. Resonant tunneling through coupled self-assembled quantum dots and the influence of inhomogeneous broadening. I 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science. Lund University.

MLA

Bryllert, Tomas et al. "Resonant tunneling through coupled self-assembled quantum dots and the influence of inhomogeneous broadening". 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science. Lund University. 2002.

Vancouver

Bryllert T, Borgström M, Sass T, Gustafson B, Landin L, Wernersson L-E et al. Resonant tunneling through coupled self-assembled quantum dots and the influence of inhomogeneous broadening. I 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science. Lund University. 2002

Author

Bryllert, Tomas ; Borgström, Magnus ; Sass, T. ; Gustafson, Boel ; Landin, L. ; Wernersson, Lars-Erik ; Seifert, Werner ; Samuelson, Lars. / Resonant tunneling through coupled self-assembled quantum dots and the influence of inhomogeneous broadening. 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science. Lund University, 2002.

RIS

TY - GEN

T1 - Resonant tunneling through coupled self-assembled quantum dots and the influence of inhomogeneous broadening

AU - Bryllert, Tomas

AU - Borgström, Magnus

AU - Sass, T.

AU - Gustafson, Boel

AU - Landin, L.

AU - Wernersson, Lars-Erik

AU - Seifert, Werner

AU - Samuelson, Lars

PY - 2002

Y1 - 2002

N2 - Resonant tunneling through a single layer of self-assembled quantum dots (QDs) as well as tunneling through two layers of vertically aligned (stacked) dots is investigated. The difference between single and double layers of QDs can be viewed as going from a two-dimensional emitter to a zero-dimensional emitter. By fabricating small-area devices we are able to probe single stacks of quantum dots, revealing details of the coupling between the stacked dots. Very sharp resonances, with peak-to-valley ratios of several hundred, have been measured in the current-voltage characteristics. We also show that the statistical size distribution of self-assembled quantum dots causing the inhomogeneous broadening in luminescence experiments can be analysed in a resonant tunneling experiment

AB - Resonant tunneling through a single layer of self-assembled quantum dots (QDs) as well as tunneling through two layers of vertically aligned (stacked) dots is investigated. The difference between single and double layers of QDs can be viewed as going from a two-dimensional emitter to a zero-dimensional emitter. By fabricating small-area devices we are able to probe single stacks of quantum dots, revealing details of the coupling between the stacked dots. Very sharp resonances, with peak-to-valley ratios of several hundred, have been measured in the current-voltage characteristics. We also show that the statistical size distribution of self-assembled quantum dots causing the inhomogeneous broadening in luminescence experiments can be analysed in a resonant tunneling experiment

KW - resonance

KW - stacked dots

KW - single stacks

KW - small area devices

KW - zero-dimensional emitter

KW - two-dimensional emitter

KW - vertically aligned dots

KW - inhomogeneous broadening

KW - QD

KW - resonant tunneling

KW - coupled self-assembled quantum dots

KW - peak-valley ratios

KW - current-voltage characteristics

KW - statistical size distribution

KW - luminescence experiments

KW - InAs-InP

M3 - Paper in conference proceeding

BT - 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science

PB - Lund University

ER -