RF Characterization of Vertical InAs Nanowire Wrap-Gate Transistors Integrated on Si Substrates

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Abstract

We present dc and RF characterization of InAs nanowire field-effect transistors (FETs) heterogeneously integrated on Si substrates in a geometry suitable for circuit applications. The FET consists of an array of 182 vertical InAs nanowires with about 6-nm HfO high-gate dielectric and a wrap-gate length of 250 nm. The transistor has a transconductance of 155 mS/mm and an on-current of 550 mA/mm at a gate voltage of 1.5 V and a drain voltage of 1 V. S-parameter measurements yield an extrinsic cutoff frequency of 9.3 GHz and a extrinsic maximum oscillation frequency of 14.3 GHz.

Detaljer

Författare
Enheter & grupper
Forskningsområden

Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Elektroteknik och elektronik
  • Den kondenserade materiens fysik

Nyckelord

Originalspråkengelska
Sidor (från-till)2733-2738
TidskriftIEEE Transactions on Microwave Theory and Techniques
Volym59
Utgåva nummer10
StatusPublished - 2011
PublikationskategoriForskning
Peer review utfördJa

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