Room-temperature InP/InAsP Quantum Discs-in-Nanowire Infrared Photodetectors

Forskningsoutput: TidskriftsbidragLetter

Abstract

The possibility to engineer nanowire heterostructures with large bandgap variations is particularly interesting for technologically important broadband photodetector applications. Here we report on a combined study of design, fabrication, and optoelectronic properties of infrared photodetectors comprising four million n+–i–n+ InP nanowires periodically ordered in arrays. The nanowires were grown by metal–organic vapor phase epitaxy on InP substrates, with either a single or 20 InAsP quantum discs embedded in the i-segment. By Zn compensation of the residual n-dopants in the i-segment, the room-temperature dark current is strongly suppressed to a level of pA/NW at 1 V bias. The low dark current is manifested in the spectrally resolved photocurrent measurements, which reveal strong photocurrent contributions from the InAsP quantum discs at room temperature with a threshold wavelength of about 2.0 μm and a bias-tunable responsivity reaching 7 A/W@1.38 μm at 2 V bias. Two different processing schemes were implemented to study the effects of radial self-gating in the nanowires induced by the nanowire/SiOx/ITO wrap-gate geometry. Summarized, our results show that properly designed axial InP/InAsP nanowire heterostructures are promising candidates for broadband photodetectors.

Detaljer

Författare
Enheter & grupper
Externa organisationer
  • Halmstad University
  • Linköping University
Forskningsområden

Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Nanoteknik
Originalspråkengelska
Sidor (från-till)3356–3362
TidskriftNano Letters
Volym17
Utgivningsnummer6
StatusPublished - 2017
PublikationskategoriForskning
Peer review utfördJa